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SPP11N80C3

CoolMOSTM Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N80C3

Isc N-Channel MOSFET Transistor

?FEATURES ?Ultraloweffectivecapacitances ?Lowgatecharge ?Improvedtransconductance ?Lowgatedrivepowerloss ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP11N80C3_08

Cool MOS Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N80C3_11

CoolMOSTM Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP12N50C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP12N50C3

N-Channel MOSFET Transistor

?DESCRITION ?Newrevolutionaryhighvoltagetechnology ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performancean

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP12N50C3

N-Channel 650 V (D-S) MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS)

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

SPP15N60C3

Isc N-Channel MOSFET Transistor

?FEATURES ?Ultraloweffectivecapacitances ?Lowgatecharge ?Improvedtransconductance ?Lowgatedrivepowerloss ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP15N60C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP15N60CFD

CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode

Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC CoolMOSCFDdesignedfor: ?SoftswitchingP

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    SPP

  • 制造商：

    WELWYN

  • 制造商全稱：

    Welwyn Components Limited

  • 功能描述：

    General Purpose Wirewound Resistors

供應(yīng)商型號品牌批號封裝庫存備注價格
英飛凌
05+
TO-220
4500
原裝進口
 詢價
INF
24+/25+
TO220
6900
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
INFINEON
13MY
TO-220
7500
原廠直銷
 詢價
INF
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價
INFINEON
12+
T0-263
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
SYNC
24+
SOT23
6232
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
INFINEON
TO-220
800
正品原裝--自家現(xiàn)貨-實單可談
 詢價
BOURNS/POWER
24+
SOP8
5800
原裝現(xiàn)貨,可開13%稅票
 詢價
INFINEON
24+
原廠封裝
15259
原裝現(xiàn)貨假一罰十
 詢價
INFINEON
24+
TO-220
3000
全新原裝環(huán)?，F(xiàn)貨
 詢價
更多SPP供應(yīng)商 更新時間2025-7-22 9:17:00

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