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SPP20N60CFD

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Intrinsicfast-recoverybodydiode ?Extremelowreverserecoverycharge ?Pb-freeleadplating;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60CFD

N-Channel MOSFET Transistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.22? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP20N60S5

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJE

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60S5

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJE

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60S5

N-Channel MOSFET Transistor

?DESCRIPTION ?Ultralowgatecharge ?Ultraloweffectivecapacitance ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice per

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP20N60S5_09

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJE

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N65C3

Marking：20N65C3；Package：TO-220；Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP21N10

SIPMOS Power-Transistor

Feature ?N-Channel ?Enhancementmode ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP21N50C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP21N50C3

N-Channel MOSFET Transistor

?DESCRITION ?Newrevolutionaryhighvoltagetechnology ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performancea

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    SPP

  • 制造商：

    WELWYN

  • 制造商全稱：

    Welwyn Components Limited

  • 功能描述：

    General Purpose Wirewound Resistors

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FREQUENCYDEVICES
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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SYNC
24+
SOT23
6232
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
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ALPS
2020+
SMD
10400
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
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BOVRNS
24+
SOP8
5000
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INFINEON
0807+
TO220
65
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英飛凌
05+
TO-220
4500
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INF
16+
TO-220
10000
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INFINEON
23+
TO-220
20000
原裝正品,假一罰十
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INFINEON
24+
TO220
2568
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INFINEON
24+
SMD
12000
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更多SPP供應(yīng)商 更新時(shí)間2025-7-25 17:55:00

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