描述 Description

Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies.

特性 Features

·30% lower E off compared to previous generation
·Short circuit withstand time – 10μs
·Designed for operation above 30kHz
·High ruggedness, temperature stable behaviour
·Pb-free lead plating; RoHS compliant
·Qualified according to JEDEC for target applications

應(yīng)用 Application

Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers,? welding and SMPS segments. ?SGP20N60HSData Sheet (355 KB, EN)ParametricSGP20N60HSTechnology?IGBT HighSpeedSwitching Frequency?min?max30.0kHz?100.0kHzPackage?TO-220Voltage Class?max600.0VIC(@100°)?max20.0AIC(@25°)?max36.0AICpuls?max80.0APtot?max178.0WVCE(sat)?3.5V?Eon?0.6mJ?Eoff(Hard Switching)?0.36mJ?td(on)?17.0ns?tr?13.0ns?td(off)?222.0ns?tf?13.0ns?QGate?100.0nC?VCE?max600.0VSwitching Frequency?HighSpeed 30-100 kHzData SheetTitleSizeDateVersionSGP20N60HSEN355 KB14 九月 200902_04SGP20N60HSEN383 KB03 十二月 200902_05Application NotesTitleSizeDateVersionApplication Note Discrete IGBT Datasheet ExplanationEN1.7 MB14 十月 201602_00Application Note IGBT Definition of Junction TemperatureEN84 KB09 四月 2009Recommendations for Assembly of Infineon TO PackagesEN1.1 MB09 四月 2009Description: IGBT (Insulated Gate Bipolar Transistor)EN625 KB19 六月 2010The Reverse Behavior of the NPT-IGBT in its On-StateEN167 KB19 六月 2010Connecting IGBTs in Parallel (Fundamentals)EN97 KB19 六月 2010Recommendations for Screw Tightening Torque for IGBT Discrete DevicesEN983 KB29 十一月 2013Additional Product InformationTitleSizeDateVersionNomenclature Guide IGBT Discretes and DiodesEN474 KB16 五月 201702_00Application BrochureTitleSizeDateVersionApplication Brochure Major Home ApplianceEN7.3 MB08 十一月 201601_00Efficient Solutions for Industrial Motor Control and DrivesEN2 MB01 三月 201401_00Product Selection GuideTitleSizeDateVersionPower Management Selection Guide 2017ENJA22.2 MB21 二月 201700_00Selection Guide - Industrial and general purpose gate driver ICsEN3.5 MB15 五月 201701_00Selection Guide IGBT DiscretesEN989 KB12 四月 201600_00Product CatalogueTitleSizeDateVersionShort Form Catalog - May 2017EN2.9 MB12 五月 201703_00Material Content SheetInfineon Support\">InfoTitleSizeDateVersionMCDS_2013-08-29_04-17-01_MA000867062_PG-TO220-3-1.pdfEN24 KB31 十月 201301_00銷售產(chǎn)品名稱SGP20N60HSOPNSGP20N60HSXKSA1產(chǎn)品狀態(tài)discontinued在線訂購封裝名稱PG-TO220-3無鉛產(chǎn)品yes無鹵yes通過無鉛認(rèn)證yes包裝規(guī)格500包裝類型TUBEMoisture LevelNAPCB Design DataTitleSizeDateVersionPCB Footprints & Symbols - Discrete IGBT - Altium - v2.0EN926 KB20 十一月 201302_00PCB Footprints & Symbols - Discrete IGBT - Cadence - v2.0EN603 KB20 十一月 201302_00PCB Footprints & Symbols - Discrete IGBT - Eagle - v2.0EN117 KB20 十一月 201302_00PCB Footprints & Symbols - Discrete IGBT - Mentor - v2.0EN776 KB21 十一月 201302_00EiceDRIVER? 2EDL Driver IC FamilyLength 9:212EDL半橋驅(qū)動芯片EiceDRIVER? 2EDL是基于絕緣體上硅技術(shù)的600伏半橋門級驅(qū)動芯片系列, 其內(nèi)部集成高性能低阻快恢復(fù)自舉二極管, 適用于需高效率和小體積的各種應(yīng)用.Length 8:30Package DataTitleSizeDateVersionPG-TO220-3-1 | SGP20N60HSXKSA1EN450 KB11 四月 201601_00PCB Design DataTitleSizeDateVersionPCB Footprints & Symbols - Discrete IGBT - Altium - v2.0EN926 KB20 十一月 201302_00PCB Footprints & Symbols - Discrete IGBT - Cadence - v2.0EN603 KB20 十一月 201302_00PCB Footprints & Symbols - Discrete IGBT - Eagle - v2.0EN117 KB20 十一月 201302_00PCB Footprints & Symbols - Discrete IGBT - Mentor - v2.0EN776 KB21 十一月 201302_00查找您的問題的答案很遺憾，您的瀏覽器不支持嵌入式框架(iframe)。您可以點擊此處查看嵌入式頁面。英飛凌歡迎您的評論及咨詢。如果您對我們的產(chǎn)品有任何問題，請?zhí)顚懴旅娴谋砀?。您的電子郵件將被轉(zhuǎn)發(fā)給相關(guān)的負(fù)責(zé)人，他們會盡快與您聯(lián)系。按下“提交“按鈕后，您可以添加與咨詢相關(guān)的附件。名*姓*電子郵件*電話公司*公司網(wǎng)址 (URL)行業(yè)*[請選擇]AUTOMOTIVECHIP CARDCOMMUNICATIONCONSUMERDATA PROCESSINGDISTRIBUTION PARTNERINDUSTRIALELECTRONIC MANUFACTURING SERVICES (EMS)EDUCATION/ACADEMICOTHERNONE其他行業(yè)國家*[請選擇]AfghanistanAlbaniaAlgeriaAmerican SamoaAndorraAngolaAnguillaAntarcticaAntigua and BarbudaArgentinaArmeniaArubaAustraliaAustriaAzerbaijanBahamasBahrainBangladeshBarbadosBelarusBelgiumBelizeBeninBermudaBhutanBoliviaBonaire, Sint Eustatius and SabaBosnia and HerzegovinaBotswanaBouvet IslandBrazilBritish Indian Ocean TerritoryBritish Virgin IslandsBruneiBulgariaBurkina FasoBurundiCambodiaCameroonCanadaCape VerdeCayman IslandsCentral African RepublicChadChileChinaChristmas IslandCocos IslandsColombiaComorosCongoCook IslandsCosta RicaCroatiaCubaCura?aoCyprusCzech RepublicC?te d'IvoireDenmarkDjiboutiDominicaDominican RepublicEcuadorEgyptEl SalvadorEquatorial GuineaEritreaEstoniaEthiopiaFalkland IslandsFaroe IslandsFijiFinlandFranceFrench GuianaFrench PolynesiaFrench Southern TerritoriesGabonGambiaGeorgiaGermanyGhanaGibraltarGreeceGreenlandGrenadaGuadeloupeGuamGuatemalaGuernseyGuineaGuinea-BissauGuyanaHaitiHeard Island And McDonald IslandsHondurasHong KongHungaryIcelandIndiaIndonesiaIranIraqIrelandIsle Of ManIsraelItalyJamaicaJapanJerseyJordanKazakhstanKenyaKiribatiKuwaitKyrgyzstanLaosLatviaLebanonLesothoLiberiaLibyaLiechtensteinLithuaniaLuxembourgMacaoMacedoniaMadagascarMalawiMalaysiaMaldivesMaliMaltaMarshall IslandsMartiniqueMauritaniaMauritiusMayotteMexicoMicronesiaMoldovaMonacoMongoliaMontenegroMontserratMoroccoMozambiqueMyanmarNamibiaNauruNepalNetherlandsNetherlands AntillesNew CaledoniaNew ZealandNicaraguaNigerNigeriaNiueNorfolk IslandNorth KoreaNorthern Mariana IslandsNorwayOmanPakistanPalauPalestinePanamaPapua New GuineaParaguayPeruPhilippinesPitcairnPolandPortugalPuerto RicoQatarReunionRomaniaRussiaRwandaSaint BarthélemySaint HelenaSaint Kitts And NevisSaint LuciaSaint MartinSaint Pierre And MiquelonSaint Vincent And The GrenadinesSamoaSan MarinoSao Tome And PrincipeSaudi ArabiaSenegalSerbiaSeychellesSierra LeoneSingaporeSint Maarten (Dutch part)SlovakiaSloveniaSolomon IslandsSomaliaSouth AfricaSouth Georgia And The South Sandwich IslandsSouth KoreaSouth SudanSpainSri LankaSudanSurinameSvalbard And Jan MayenSwazilandSwedenSwitzerlandSyriaTaiwanTajikistanTanzaniaThailandThe Democratic Republic Of CongoTimor-LesteTogoTokelauTongaTrinidad and TobagoTunisiaTurkeyTurkmenistanTurks And Caicos IslandsTuvaluU.S. Virgin IslandsUgandaUkraineUnited Arab EmiratesUnited KingdomUnited StatesUnited States Minor Outlying IslandsUruguayUzbekistanVanuatuVaticanVenezuelaVietnamWallis And FutunaWestern SaharaYemenZambiaZimbabwe?land Islands首選分銷商/經(jīng)銷商*[請選擇]AdvanIDeArihant ArrowASECAvnetChangnam Chip 1 StopComelecDabo Digi-KeyEBVEdal Elsena Eurotone Farnell FutureHans BuchIntron JannockJingchuan KERN Macnica MouserNiskoNordicPantek/Allplus RSRutronik RyoyoSAPLSascoHolz SilicaSilverstarSterntecSymmetronTecstarTomenToyotsu WPGYuban OTHER其他分銷商/經(jīng)銷商產(chǎn)品名稱*預(yù)計全年生產(chǎn)量 (件）每年*[請選擇]less than 100100 to 1.0001.000 to 10.00010.000 to 100.000more than 100.000unknown請盡可能詳細(xì)的描述您的技術(shù)問題*我同意英飛凌科技股份有限公司及其授權(quán)合作伙伴收集并使用我的個人信息。*我希望收到關(guān)于英飛凌產(chǎn)品的通訊郵件。（您可隨時免費取消該訂閱。）欲了解更多有關(guān)我們信息保護(hù)規(guī)定的信息， 請點擊 信息保護(hù)規(guī)定提交重置所有標(biāo)有星號（*）的字段都是必填字段。Where to buyPlease use our location finder to get in contact with your nearest Infineon distributor or sales officeFind a locationAsk InfineonproductareaSupportMissingFirstname = '缺少名';productareaSupportIncorrectNoabbreviation = '請不要縮寫';productareaSupportMissingLastname = '缺少姓';productareaSupportMissingEmail = '缺少郵件地址';productareaSupportIncorrectEmail = '郵件地址不正確';productareaSupportMissingCompany = '缺少公司名稱';productareaSupportIncorrectCompanyUrl = '請輸入有效網(wǎng)址';productareaSupportMissingIndustryfield = '缺少工業(yè)領(lǐng)域';productareaSupportMissingCountry = '缺少所在國家';productareaSupportMissingDistributor = '缺少經(jīng)銷商名稱';productareaSupportMissingProductname = '缺少產(chǎn)品名稱';productareaSupportMissingProductionvolume = '缺少需求量';productareaSupportMissingTechnicalquestion = '缺少技術(shù)問題';productareaSupportMissingCaptcha = '驗證碼無法識別';productareaSupportIncorrectDetails = '請給出更多詳情';productareaSupportDataAgree = '請同意我們處理您的個人資料。';Home> 產(chǎn)品分類Follow us·Infineon
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簡介

SGP20N60HS屬于分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單。由制造生產(chǎn)的SGP20N60HS晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開關(guān)能量和柵極電荷。