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SCTW60N120G2AG中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
SCTW60N120G2AG |
| 功能描述 | Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package |
| 絲印標識 | |
| 封裝外殼 | HiP247 |
| 文件大小 |
197.08 Kbytes |
| 頁面數(shù)量 |
11 頁 |
| 生產(chǎn)廠商 | STMICROELECTRONICS |
| 中文名稱 | 意法半導體 |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-8-22 10:31:00 |
| 人工找貨 | SCTW60N120G2AG價格和庫存，歡迎聯(lián)系客服免費人工找貨 |
SCTW60N120G2AG規(guī)格書詳情
特性 Features
? AEC-Q101 qualified
? High speed switching performance
? Very fast and robust intrinsic body diode
? Low capacitances
? Very high operating junction temperature capability (TJ = 200 °C)
Applications
? DC-DC converters
? Solar Inverters and renewable energy
? SMPS
? OBC
描述 Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative
properties of wide bandgap materials. This results in unsurpassed on-resistance per
unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties of the SiC material allow designers to use an
industry-standard outline with significantly improved thermal capability. These
features render the device perfectly suitable for high-efficiency and high power
density applications.
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST/意法半導體 |
25+ |
原廠封裝 |
10280 |
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！ |
詢價 | ||
ST/意法半導體 |
2021+ |
HIP247-3 |
7600 |
原裝現(xiàn)貨，歡迎詢價 |
詢價 | ||
ST/意法半導體 |
24+ |
HIP247-3 |
16900 |
原裝現(xiàn)貨,實單價優(yōu) |
詢價 | ||
ST |
25+ |
HIP247 |
16900 |
原裝，請咨詢 |
詢價 | ||
ST/意法半導體 |
23+ |
N/A |
20000 |
詢價 | |||
ST |
24+ |
HiP247 |
340 |
市場最低 原裝現(xiàn)貨 假一罰百 可開原型號 |
詢價 | ||
ST |
1 |
只做正品 |
詢價 | ||||
ST(意法) |
2511 |
TO-247-3 |
5904 |
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價 |
詢價 | ||
ST/意法半導體 |
25+ |
原廠封裝 |
10280 |
詢價 | |||
ST/意法半導體 |
23+ |
HIP247-3 |
16900 |
公司只做原裝，可來電咨詢 |
詢價 |
