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SCTW100N120G2AG中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
SCTW100N120G2AG |
| 功能描述 | Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package |
| 絲印標識 | |
| 封裝外殼 | HiP247 |
| 文件大小 |
217.31 Kbytes |
| 頁面數(shù)量 |
11 頁 |
| 生產(chǎn)廠商 | STMICROELECTRONICS |
| 中文名稱 | 意法半導體 |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-8-22 8:49:00 |
| 人工找貨 | SCTW100N120G2AG價格和庫存，歡迎聯(lián)系客服免費人工找貨 |
SCTW100N120G2AG規(guī)格書詳情
特性 Features
? AEC-Q101 qualified
? High speed switching performance
? Very fast and robust intrinsic body diode
? Low capacitances
? Very high operating junction temperature capability (TJ = 200 °C)
Applications
? Traction for inverters
? DC-DC converters
? Solar inverters
? OBC
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 2nd generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
HiP247 |
7000 |
詢價 | |||
ST |
24+ |
N/A |
8000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
ST |
22+23+ |
TO-247 |
8000 |
新到現(xiàn)貨，只做原裝進口 |
詢價 | ||
ST |
24+ |
TO-247 |
5000 |
十年沉淀唯有原裝 |
詢價 | ||
STMicroelectronics |
23+ |
HiP-247-3 |
3652 |
原廠正品現(xiàn)貨供應SIC全系列 |
詢價 | ||
ST |
23+ |
HIP247 |
12700 |
買原裝認準中賽美 |
詢價 | ||
ST |
2023+ |
HIP247 |
6000 |
原裝正品現(xiàn)貨、支持第三方檢驗、終端BOM表可配單提供 |
詢價 | ||
ST |
24+ |
NA |
16900 |
支持樣品,原裝現(xiàn)貨,提供技術支持! |
詢價 | ||
ST/意法 |
21+ |
HiP247 |
1773 |
只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨! |
詢價 | ||
ST |
23+ |
TO-247 |
20000 |
詢價 |
