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2SC5751

Marking:R54;NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(30mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm ?HFT3technology(fT=12GHz)adopted ?Highreliab

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5751-T2

Marking:R54;NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(30mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm ?HFT3technology(fT=12GHz)adopted ?Highreliab

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5752

Marking:R55;NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) 4-PINSUPERMINIMOLD FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm ?HFT3technology(fT=12GHz)adopted ?Highreliabilitythroughuseof

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5752-T1

Marking:R55;NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) 4-PINSUPERMINIMOLD FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm ?HFT3technology(fT=12GHz)adopted ?Highreliabilitythroughuseof

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5753

Marking:R55;NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm ?HFT3technology(fT=12GHz)adopted ?Highreliab

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5753-T2

Marking:R55;NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm ?HFT3technology(fT=12GHz)adopted ?Highreliab

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5754

Marking:R57;NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES ?Idealfor460MHzto2.4GHzmediumoutputpoweramplification ?PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm ?Highcollectorefficiency:

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5754-T2

Marking:R57;NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES ?Idealfor460MHzto2.4GHzmediumoutputpoweramplification ?PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm ?Highcollectorefficiency:

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

744383350056HT

Marking:R56;WE-MAPI SMT Power Inductor

GeneralInformation: AmbientTemperature(referring toIRP)-55°Cupto+110°C OperatingTemperature-55°Cupto+150°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

744383560056HT

Marking:R56;WE-MAPI SMT Power Inductor

GeneralProperties: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+150°Cunderworst caseconditions AmbientTemperature(referring toIR)-55upto+110°C OperatingTemperature-55upto+150°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

詳細參數(shù)

  • 型號:

    R5

  • 制造商:

    JST Manufacturing

  • 功能描述:

    10-12AWG 28mm 15mm

  • 功能描述:

    Terminal,R5.5-10

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更多R5供應(yīng)商 更新時間2025-7-26 10:31:00