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PHB20N06T

N-channel TrenchMOS transistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Features ■Verylowon-stateresistance ■Fastswitching. Applications ■Switchedmodepowersupplies ■DCtoDCconverters.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHB20N06T

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PHB20N06T

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHD20N06T

N-channelTrenchMOSstandardlevelFET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PHD20N06T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=77mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHD20N06T

N-Channel60-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

PHD20N06T

N-channelTrenchMOStransistor

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS?1technology. Features ■TrenchMOS?technology ■Lowon-stateresistance ■Fastswitching. Applications ■Switchedmodepowersupplies ■DCtoDCconverters ■Generalpurposeswitch.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHP20N06

N-channelTrenchMOStransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Features ■Verylowon-stateresistance ■Fastswitching. Applications ■Switchedmodepowersupplies ■DCtoDCconverters.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHP20N06

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelope. ThedeviceisintendedforuseinSwitchedModePowerSupplies(SMPS),motorcontrol,welding,DC/DCandAC/DCconverters,andinautomotiveandgeneralpurposeswitchingapplications.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHP20N06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=80mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    PHB20N06T

  • 功能描述:

    MOSFET RAIL MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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TO-263
20000
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8866
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11846
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PHI
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TO-263
20000
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恩XP
25+
25000
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恩XP
23+
TO-263
3500
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恩XP
23+
SOT404TO-263D2PAK
50000
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PHI
24+
TO-263
240
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恩XP
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
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更多PHB20N06T供應(yīng)商 更新時(shí)間2025-7-22 16:36:00