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PBRN123YK

Marking：G7；Package：SC-59A；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PBRN123YS

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PBRN123YT

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PBRN123YT

40V,600mANPNPBRET;R1=2.2kΩ,R2=10kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123YT 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

PBRN123YT-Q

40V,600mANPNPBRET;R1=2.2kΩ,R2=10kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123YT-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

PBRP123ET

40V,600mAPNPPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

PBRP123ET-Q

40V,600mAPNPPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

PBRP123YT

40V,600mAPNPPBRET;R1=2.2kΩ,R2=10kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123YT 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

PBRP123YT-Q

40V,600mAPNPPBRET;R1=2.2kΩ,R2=10kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123YT-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturatio

PC123

DEVICESPECIFICATIONFORPHOTOCOUPLER

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-