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P3800TA

Marking：P38A；Package：DO-214AC；Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

P3800TB

Marking：P38B；Package：DO-214AC；Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Eliminatesovervoltagecausedbyfastrisingtransients Moisturesensitivitylevel:Level1 Weight69mg(approximate) Nondegenerative ResponseTimeis

PJP35N06A_T0_00001

Marking：P35N06A；Package：TO-220AB；60V N-Channel Enhancement Mode MOSFET

Features ?RDS(ON),VGS@10V,ID@20A

PJP3NA80_T0_00001

Marking：P3NA80；Package：TO-220AB；800V N-Channel MOSFET

Features ?RDS(ON),VGS@10V,ID@1.5A

RFP30N06LE

Marking：P30N06LE；Package：TO-220AB；30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

SO5401

Marking：P33；Package：SOT-23；SMALL SIGNAL PNP TRANSISTORS

■SILICONEPITAXIALPLANARPNPTRANSISTORS ■MINIATUREPLASTICPACKAGEFORAPPLICATIONINSURFACEMOUNTINGCIRCUITS ■GENERALPURPOSEANDHIGHVOLTAGEAMPLIFIER

STP36NF06

Marking：P36NF06；Package：TO-220；N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize?stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

STP36NF06FP

Marking：P36NF06；Package：TO-220FP；N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize?stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

STP3N150

Marking：P3N150；Package：TO-220；N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

Features ?100avalanchetested ?IntrinsiccapacitancesandQgminimized ?Highspeedswitching ?FullyisolatedTO-3PFplasticpackage,creepagedistancepathis5.4mm(typ.) Applications ?Switchingapplications Description ThesePowerMOSFETsaredesignedusingtheSTMicroelectron

STP3NK60Z

Marking：P3NK60Z；Package：TO-220；N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH? Power MOSFETs in D2PAK, IPAK, DPAK, TO-220 and TO-220FP packages

Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH?technologybySTMicroelectronics,an optimizationofthewell-establishedPowerMESH?.Inadditiontoasignificant reductioninon-resistance,thesedevicesaredesignedtoensure