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STP36NF06

絲?。?a target="_blank" title="Marking" href="/p36nf06/marking.html">P36NF06；Package：TO-220；N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize?stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

STP36NF06

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=0.04Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STP36NF06

N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET

STP36NF06

N-Channel 60 V (D-S) MOSFET

STP36NF06

N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET;

STP36NF06FP

絲印：P36NF06；Package：TO-220FP；N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize?stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

STP36NF06FP

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=0.04Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STP36NF06L

N-channel 60V - 0.032ohm - 30A - TO-220 - D2PAK STripFET TM II Power MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize?stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

STP36NF06L

N溝道60V - 0.032 Ohm - 30A TO-220 STRIPFET(TM) II MOSFET; ? Exceptional dv/dt capability \n? Low threshold drive \n? 100% avalanche tested;

This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size?” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.\n\n

STP36NF06L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=40mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.