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STP3N150

絲?。?a target="_blank" title="Marking" href="/p3n150/marking.html">P3N150；Package：TO-220；N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

Features ?100avalanchetested ?IntrinsiccapacitancesandQgminimized ?Highspeedswitching ?FullyisolatedTO-3PFplasticpackage,creepagedistancepathis5.4mm(typ.) Applications ?Switchingapplications Description ThesePowerMOSFETsaredesignedusingtheSTMicroelectron

STP3N150

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2.5A@TC=25℃ ·DrainSourceVoltage-VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=9Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STP3N150

N溝道1500 V、6 Ohm典型值、2.5 A PowerMESH(TM) 功率MOSFET，TO-220封裝

These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.\n\n; ? 100% avalanche tested \n? Intrinsic capacitances and Qg minimized \n? High speed switching \n? Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.);

STP3N150

N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET

STP3N150

N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

STP3N150

isc N-Channel MOSFET Transistor