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首頁(yè) >NE4210S01-T1>規(guī)格書(shū)列表

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NE4210S01-T1

X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE4210S01-T1

SUPER LOW NOISE HJ FET

DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown

CEL

California Eastern Labs

NE4210S01-T1

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE4210S01-T1B

X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE4210S01-T1B

SUPER LOW NOISE HJ FET

DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown

CEL

California Eastern Labs

NE4210S01-T1B

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE4210S01-T1B

Package：4-SMD；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：HJ-FET 13DB S01

CEL

California Eastern Labs

詳細(xì)參數(shù)

  • 型號(hào)：

    NE4210S01-T1

  • 功能描述：

    射頻GaAs晶體管 Super Lo Noise HJFET

  • RoHS：

    否

  • 制造商：

    TriQuint Semiconductor

  • 技術(shù)類(lèi)型：

    pHEMT

  • 頻率：

    500 MHz to 3 GHz

  • 增益：

    10 dB

  • 噪聲系數(shù)：

    正向跨導(dǎo)

  • gFS（最大值/最小值）：

    4 S 漏源電壓

  • 閘/源擊穿電壓：

    - 8 V

  • 漏極連續(xù)電流：

    3 A

  • 最大工作溫度：

    + 150 C

  • 功率耗散：

    10 W

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RENESAS
2016+
SMT-86
6000
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
 詢價(jià)
SMD
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價(jià)
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
RENESAS/瑞薩
21+
SMT-86
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
RENESAS/瑞薩
25+
SMT-86
10000
全新原裝現(xiàn)貨庫(kù)存
 詢價(jià)
NEC
22+
SMT
25000
只有原裝原裝,支持BOM配單
 詢價(jià)
RENESAS
23+
SMT-86
50000
只做原裝正品
 詢價(jià)
24+
3000
公司存貨
 詢價(jià)
原廠正品
23+
SMT
5000
原裝正品,假一罰十
 詢價(jià)
NEC
23+
DO-4
18689
詢價(jià)
更多NE4210S01-T1供應(yīng)商 更新時(shí)間2025-7-30 22:58:00

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