NE32484AS中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
NE32484AS |
| 功能描述 | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| 文件大小 |
55.54 Kbytes |
| 頁面數(shù)量 |
5 頁 |
| 生產(chǎn)廠商 | Renesas Electronics America |
| 企業(yè)簡稱 |
NEC【瑞薩】 |
| 中文名稱 | 日本瑞薩電子株式會(huì)社官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊 | |
| 更新時(shí)間 | 2025-8-1 18:05:00 |
| 人工找貨 | NE32484AS價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
NE32484AS規(guī)格書詳情
DESCRIPTION
The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications.
NECs stringent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
? VERY LOW NOISE FIGURE:
0.6 dB typical at 12 GHz
? HIGH ASSOCIATED GAIN:
11 dB typical at 12 GHz
? LG = 0.25 μm, WG = 200 μm
? LOW COST METAL/CERAMIC PACKAGE
? TAPE & REEL PACKAGING OPTION AVAILABLE
產(chǎn)品屬性
- 型號：
NE32484AS
- 制造商：
NEC
- 制造商全稱：
NEC
- 功能描述：
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NEC |
01+ |
SOP |
101 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
NEC |
23+ |
999999 |
原裝正品現(xiàn)貨量大可訂貨 |
詢價(jià) | |||
NEC |
20+ |
SOP |
2960 |
誠信交易大量庫存現(xiàn)貨 |
詢價(jià) | ||
NEC |
2023+ |
十字架 |
50000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
NEC |
25+23+ |
29058 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | |||
NEC |
22+ |
SMT-76 |
3000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
NEC |
2450+ |
SOT86 |
6540 |
只做原裝正品現(xiàn)貨或訂貨!終端客戶免費(fèi)申請樣品! |
詢價(jià) | ||
CEL |
23+ |
原廠原包 |
19960 |
只做進(jìn)口原裝 終端工廠免費(fèi)送樣 |
詢價(jià) | ||
24+ |
2789 |
全新原裝自家現(xiàn)貨!價(jià)格優(yōu)勢! |
詢價(jià) | ||||
NEC |
6000 |
面議 |
19 |
DIP/SMD |
詢價(jià) |
