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NCS2540DTBG

Triple750MHzVoltageFeedbackOpAmpwithEnableFeature

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCS2540DTG

Triple750MHzVoltageFeedbackOpAmpwithEnableFeature

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NJM2540

MixerandOscillatorforTVTuner

NJRCNew Japan Radio

新日本無線株式會社

NJM2540V

MixerandOscillatorforTVTuner

NJRCNew Japan Radio

新日本無線株式會社

NTE2540

SiliconNPNTransistorDarlington,HighVoltageSwitch

Features: ?HighDCCurrentGain:hFE=600Min(VCE=2V,IC=2A) ?MonolithicConstructionw/Built–InBase–EmitterShuntResistor

NTE

NTE Electronics

PBSS2540E

40V,500mANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS2540F

40VlowVNPNtransistor

DESCRIPTION NPNlowVCEsattransistorinaSC-89(SOT490)plasticpackage. PNPcomplement:PBSS3540F. FEATURES ?Lowcollector-emittersaturationvoltage ?Highcurrentcapability ?Improvedthermalbehaviourduetoflatleads ?EnhancedperformanceoverSOT23generalpurposetransistors.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS2540M

40V,0.5ANPNlowVCEsat(BISS)transistor

DESCRIPTION LowVCEsatNPNtransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:PBSS3540M. FEATURES ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highefficiencyleadingtoreducedheatgeneration ?Reducedprinted

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS2540M

40V,0.5ANPNlowVCEsat(BISS)transistor

1.Generaldescription LowVCEsatNPNtransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:PBSS3540M. 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highefficiencyleadingtoreducedheat

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS2540MB

40V,0.5ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS3540MB. Featuresandbenefits ■LeadlessultrasmallSMDplastic package ■Lowpackageheight

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

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MOTOROLA
專業(yè)模塊
MODULE
8513
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GeneSiC
1935+
N/A
55
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GENESIC
1809+
DO-4
326
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GeneSiC
22+
NA
55
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GeneSiC Semiconductor
25+
DO-4
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
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MOTOROLA/摩托羅拉
2023+
MODULE
1467
主打螺絲模塊系列
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ON/安森美
TO-220
22+
6000
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ON/安森美
23+
TO-220
6000
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ON/安森美
22+
TO-220
25000
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ON/安森美
22+
TO-220
100930
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更多MUR2540DC-R供應(yīng)商 更新時(shí)間2025-7-28 20:12:00

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