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MTP50P03HDL規(guī)格書詳情
HDTMOS E-FET Power Field Effect Transistor
P–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號：
MTP50P03HDL
- 功能描述：
MOSFET 30V 50A P-Channel
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
2450+ |
TO220 |
6885 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
ON/安森美 |
24+ |
NA/ |
10065 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
ON(安森美) |
2511 |
4945 |
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價 |
詢價 | |||
ONS |
24+ |
3TO-220 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
ON/安森美 |
23+ |
15500 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | ||||
NEXPERIA/安世 |
23+ |
SOT355-1 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
ON(安森美) |
24+ |
NA/ |
7350 |
現(xiàn)貨供應(yīng),當天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | ||
ON(安森美) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進口正品做服務(wù)做口碑有支持 |
詢價 | ||
VBSEMI/微碧半導(dǎo)體 |
24+ |
TO220 |
7800 |
全新原廠原裝正品現(xiàn)貨,低價出售,實單可談 |
詢價 |
