MTP50N06中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號(hào) |
MTP50N06 |
| 功能描述 | TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
| 文件大小 |
232.47 Kbytes |
| 頁面數(shù)量 |
8 頁 |
| 生產(chǎn)廠商 | Motorola |
| 中文名稱 | 摩托羅拉 |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊 | |
| 更新時(shí)間 | 2025-9-5 20:00:00 |
| 人工找貨 | MTP50N06價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
MTP50N06規(guī)格書詳情
TMOS E-FET? Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號(hào)：
MTP50N06
- 制造商：
MOTOROLA
- 制造商全稱：
Motorola, Inc
- 功能描述：
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
17 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
IR |
24+ |
TO 220 |
161577 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
MOTOROLA/摩托羅拉 |
00+ |
TO-220 |
122 |
詢價(jià) | |||
ON |
23+ |
TO-220 |
6893 |
詢價(jià) | |||
MOTOROLA |
23+ |
NA |
315 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
MOT |
25+23+ |
TO-220 |
28626 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
MTP50N06V |
15 |
15 |
詢價(jià) | ||||
MOTOROLA/摩托羅拉 |
23+ |
TO-220 |
30000 |
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢 |
詢價(jià) | ||
MOT |
24+ |
TO-220 |
5000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價(jià) | ||
MOTOROLA |
2025+ |
TO220 |
4835 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) |
