首頁(yè)>MTP50N06EL>規(guī)格書(shū)詳情
MTP50N06EL中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
MTP50N06EL |
| 功能描述 | TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
| 文件大小 |
232.47 Kbytes |
| 頁(yè)面數(shù)量 |
8 頁(yè) |
| 生產(chǎn)廠商 | Motorola, Inc |
| 企業(yè)簡(jiǎn)稱 |
MOTOROLA【摩托羅拉】 |
| 中文名稱 | 加爾文制造公司官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-8-2 13:36:00 |
| 人工找貨 | MTP50N06EL價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
MTP50N06EL規(guī)格書(shū)詳情
TMOS E-FET? Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
TO-220 |
6430 |
原裝現(xiàn)貨/歡迎來(lái)電咨詢 |
詢價(jià) | ||
恩XP |
2324+ |
NA |
78920 |
二十余載金牌老企,研究所優(yōu)秀合供單位,您的原廠窗口 |
詢價(jià) | ||
ON/安森美 |
2022+ |
TO-220 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價(jià) | ||
STANSON |
23+ |
SOP-8P |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
MOT |
05+ |
TO-220 |
3000 |
原裝進(jìn)口 |
詢價(jià) | ||
23+ |
TO-220 |
2800 |
正品原裝貨價(jià)格低 |
詢價(jià) | |||
MOTOROLA品牌 |
2016+ |
TO-220 |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價(jià) | ||
MOT |
24+ |
N/A |
1580 |
詢價(jià) | |||
ON |
23+ |
TO-220 |
6893 |
詢價(jià) | |||
ON/安森美 |
2022+ |
TO-220 |
25000 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) |
