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MTP6N60

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS)

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MTP6N60

N-ChannelMosfetTransistor

DESCRITION ?Designedforhighefficiencyswitchmodepowersupply. FEATURES ?DrainCurrent-ID=6A@TC=25°C ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max) ?AvalancheEnergySpecified ?FastSwitching ?SimpleDriveRequirement

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP6N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP6N60E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP6N60E

TMOSPOWERFET6.0AMPERES600VOLTSRDS(on)=1.2OHMS

TMOSE-FET? PowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstand

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP6N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTW6N60E

PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGate

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTW6N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDT6N60

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

NDT6N60P

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    MTB6N60E

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

  • 制造商：

    ON Semiconductor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
onsemi(安森美)
24+
-
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
ON
23+
TO-263
6893
詢價(jià)
24+
N/A
1182
詢價(jià)
mot
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
MOT
25+23+
TO263
72872
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價(jià)
MOTOROLA/摩托羅拉
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
MOTOROLA
23+
SOT-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
MOTOROLA
22+
TO-263
3000
原裝正品,支持實(shí)單
 詢價(jià)
MOTOROLA
00+
SOT-263
1000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
MOTOROLA/摩托羅拉
22+
SOT-263
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
更多MTB6N60E供應(yīng)商 更新時(shí)間2025-7-26 16:12:00

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