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MTB6N60E

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswith

MTB6N60E

TMOS POWER FET 6.0 AMPERES 600 VOLTS;

MTB6N60E1

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOSE-FET?HighEnergyPowerFETD2PAK-SLStraightLead N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.De

MTB6N60E1

High Energy PowerFET

MTB6N60E1

TMOS POWER FET 6.0 AMPERES 600 VOLTS;

MTB6N60E1

High Energy PowerFET;