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MTP6N60

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS)

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STMICROELECTRONICS

MTP6N60

N-Channel Mosfet Transistor

DESCRITION ?Designedforhighefficiencyswitchmodepowersupply. FEATURES ?DrainCurrent-ID=6A@TC=25°C ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max) ?AvalancheEnergySpecified ?FastSwitching ?SimpleDriveRequirement

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

NJSEMI

MTP6N60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISC

MTP6N60

Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220

NJS

New Jersey Semiconductor

MTP6N60E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISC

MTP6N60E

TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS

TMOSE-FET? PowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstand

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

Motorola

MTP6N60E

Power Field Effect Transistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP6N60E

Power Field Effect Transistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

技術(shù)參數(shù)

  • Maximum Gate Source Voltage：

    ±20V

  • Maximum Drain Source Voltage：

    600V

  • Maximum Continuous Drain Current：

    6.8A

  • Configuration：

    Single

  • Channel Type：

    N

  • Channel Mode：

    Enhancement

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
24+
TO 220
161228
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
ON
23+
TO-220
6893
詢價(jià)
24+
5000
公司存貨
 詢價(jià)
MOT
06+
TO-220
2500
自己公司全新庫存絕對(duì)有貨
 詢價(jià)
ON
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價(jià)
ST
17+
TO-220
6200
詢價(jià)
ON/ST
24+
TO-220
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
ON/安森美
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ON/安森美
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
MOTOROLA/摩托羅拉
2022+
TO-220
12888
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
更多MTP6N60供應(yīng)商 更新時(shí)間2025-8-1 14:26:00

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