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首頁>M5M4V4265CTP-7>規(guī)格書詳情

M5M4V4265CTP-7中文資料三菱電機數(shù)據(jù)手冊PDF規(guī)格書

M5M4V4265CTP-7
廠商型號

M5M4V4265CTP-7

功能描述

EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM

文件大小

317.4 Kbytes

頁面數(shù)量

31

生產(chǎn)廠商

MITSUBISHI

中文名稱

三菱電機

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-24 8:21:00

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M5M4V4265CTP-7規(guī)格書詳情

DESCRIPTION

This is a family of 262144-word by 16-bit dynamic RAMs with EDO mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. The lower supply (3.3V) operation, due to the optimization of transistor structure, provides low power dissipation while maintaining high speed operation. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application. This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.

FEATURES

● Standard 40 pin SOJ, 44 pin TSOP (II)

● Single 3.3±0.3V supply

● Low stand-by power dissipation

CMOS Input level ---------------------------------- 1.8mW (Max)

CMOS Input level ---------------------------------- 360μW (Max) *

● Operating power dissipation

M5M4V4265CXX-5,-5S -------------------------------- 486mW (Max)

M5M4V4265CXX-6,-6S -------------------------------- 432mW (Max)

M5M4V4265CXX-7,-7S -------------------------------- 396mW (Max)

● Self refresh capability *

Self refresh current ------------------------------ 100μA (Max)

● Extended refresh capability

Extended refresh current -------------------------- 100μA (Max)

● EDO mode (512-column random access), Read-modify-write, RASonly refresh, CAS before RAS refresh, Hidden refresh capabilities.

● Early-write mode, OE and W to control output buffer impedance

● 512 refresh cycles every 8.2ms (A0~A8)

● 512 refresh cycles every 128ms (A0~A8) *

● Byte or word control for Read/Write operation (2CAS, 1W type)

* : Applicable to self refresh version (M5M4V4265CJ,TP-5S,-6S, -7S : option) only

APPLICATION

Microcomputer memory, Refresh memory for CRT, Frame buffer memory for CRT

產(chǎn)品屬性

  • 型號:

    M5M4V4265CTP-7

  • 制造商:

    MITSUBISHI

  • 制造商全稱:

    Mitsubishi Electric Semiconductor

  • 功能描述:

    EDO(HYPER PAGE) MODE 4194304-BIT(262144-WORD BY 16-BIT) DYNAMIC RAM

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
MIT
2020+
O-NEWS
300
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
MITSUBISHI
24+
20-SOP
100
原裝現(xiàn)貨假一罰十
詢價
MITSUBISHI/三菱
24+
NA/
600
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
MITSUBIS
25+23+
TSOP
37264
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
MIT
23+
TSOP
8000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價
MIT
20+
20-SOP
2960
誠信交易大量庫存現(xiàn)貨
詢價
9410
84
公司優(yōu)勢庫存 熱賣中!
詢價
TSOP28
2809
正品原裝--自家現(xiàn)貨-實單可談
詢價
MITSUBISHI
1999
TSOP
480
原裝現(xiàn)貨海量庫存歡迎咨詢
詢價
MITSUBISHI
2025+
TSOP
4365
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
詢價