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首頁>M5M4V4265CJ-6>規(guī)格書詳情

M5M4V4265CJ-6中文資料三菱電機數(shù)據(jù)手冊PDF規(guī)格書

M5M4V4265CJ-6
廠商型號

M5M4V4265CJ-6

功能描述

EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM

文件大小

317.4 Kbytes

頁面數(shù)量

31

生產(chǎn)廠商

MITSUBISHI

中文名稱

三菱電機

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-24 10:20:00

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M5M4V4265CJ-6規(guī)格書詳情

DESCRIPTION

This is a family of 262144-word by 16-bit dynamic RAMs with EDO mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. The lower supply (3.3V) operation, due to the optimization of transistor structure, provides low power dissipation while maintaining high speed operation. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application. This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.

FEATURES

● Standard 40 pin SOJ, 44 pin TSOP (II)

● Single 3.3±0.3V supply

● Low stand-by power dissipation

CMOS Input level ---------------------------------- 1.8mW (Max)

CMOS Input level ---------------------------------- 360μW (Max) *

● Operating power dissipation

M5M4V4265CXX-5,-5S -------------------------------- 486mW (Max)

M5M4V4265CXX-6,-6S -------------------------------- 432mW (Max)

M5M4V4265CXX-7,-7S -------------------------------- 396mW (Max)

● Self refresh capability *

Self refresh current ------------------------------ 100μA (Max)

● Extended refresh capability

Extended refresh current -------------------------- 100μA (Max)

● EDO mode (512-column random access), Read-modify-write, RASonly refresh, CAS before RAS refresh, Hidden refresh capabilities.

● Early-write mode, OE and W to control output buffer impedance

● 512 refresh cycles every 8.2ms (A0~A8)

● 512 refresh cycles every 128ms (A0~A8) *

● Byte or word control for Read/Write operation (2CAS, 1W type)

* : Applicable to self refresh version (M5M4V4265CJ,TP-5S,-6S, -7S : option) only

APPLICATION

Microcomputer memory, Refresh memory for CRT, Frame buffer memory for CRT

產(chǎn)品屬性

  • 型號:

    M5M4V4265CJ-6

  • 制造商:

    MITSUBISHI

  • 制造商全稱:

    Mitsubishi Electric Semiconductor

  • 功能描述:

    EDO(HYPER PAGE) MODE 4194304-BIT(262144-WORD BY 16-BIT) DYNAMIC RAM

供應商 型號 品牌 批號 封裝 庫存 備注 價格
24+
SMD40
6
自己現(xiàn)貨
詢價
MIT
20+
TSOP
2960
誠信交易大量庫存現(xiàn)貨
詢價
MIT
2402+
TSOP
8324
原裝正品!實單價優(yōu)!
詢價
MIT
24+
TSOP
9600
原裝現(xiàn)貨,優(yōu)勢供應,支持實單!
詢價
MITSUBISHI
22+
TSOP
5000
全新原裝現(xiàn)貨!價格優(yōu)惠!可長期
詢價
MITSUBIS
22+
TSOP40
3000
原裝正品,支持實單
詢價
MITSUBISHI
25+
TSOP
10093
只做原裝進口!正品支持實單!
詢價
MIT
98+
TSSOP
223
就找我吧!--邀您體驗愉快問購元件!
詢價
MIT
23+
TSSOP
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
MIT
25+
TSOP
65428
百分百原裝現(xiàn)貨 實單必成
詢價