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首頁(yè)>M5M4V4265CJ-7>規(guī)格書詳情

M5M4V4265CJ-7中文資料三菱電機(jī)數(shù)據(jù)手冊(cè)PDF規(guī)格書

M5M4V4265CJ-7
廠商型號(hào)

M5M4V4265CJ-7

功能描述

EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM

文件大小

317.4 Kbytes

頁(yè)面數(shù)量

31 頁(yè)

生產(chǎn)廠商

MITSUBISHI

中文名稱

三菱電機(jī)

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-8-24 11:01:00

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M5M4V4265CJ-7規(guī)格書詳情

DESCRIPTION

This is a family of 262144-word by 16-bit dynamic RAMs with EDO mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. The lower supply (3.3V) operation, due to the optimization of transistor structure, provides low power dissipation while maintaining high speed operation. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application. This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.

FEATURES

● Standard 40 pin SOJ, 44 pin TSOP (II)

● Single 3.3±0.3V supply

● Low stand-by power dissipation

CMOS Input level ---------------------------------- 1.8mW (Max)

CMOS Input level ---------------------------------- 360μW (Max) *

● Operating power dissipation

M5M4V4265CXX-5,-5S -------------------------------- 486mW (Max)

M5M4V4265CXX-6,-6S -------------------------------- 432mW (Max)

M5M4V4265CXX-7,-7S -------------------------------- 396mW (Max)

● Self refresh capability *

Self refresh current ------------------------------ 100μA (Max)

● Extended refresh capability

Extended refresh current -------------------------- 100μA (Max)

● EDO mode (512-column random access), Read-modify-write, RASonly refresh, CAS before RAS refresh, Hidden refresh capabilities.

● Early-write mode, OE and W to control output buffer impedance

● 512 refresh cycles every 8.2ms (A0~A8)

● 512 refresh cycles every 128ms (A0~A8) *

● Byte or word control for Read/Write operation (2CAS, 1W type)

* : Applicable to self refresh version (M5M4V4265CJ,TP-5S,-6S, -7S : option) only

APPLICATION

Microcomputer memory, Refresh memory for CRT, Frame buffer memory for CRT

產(chǎn)品屬性

  • 型號(hào):

    M5M4V4265CJ-7

  • 制造商:

    MITSUBISHI

  • 制造商全稱:

    Mitsubishi Electric Semiconductor

  • 功能描述:

    EDO(HYPER PAGE) MODE 4194304-BIT(262144-WORD BY 16-BIT) DYNAMIC RAM

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
MITSUBISHI/三菱
2447
TSOP40
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢價(jià)
MIT
23+
TSSOP
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
24+
SMD40
6
自己現(xiàn)貨
詢價(jià)
MIT
20+
TSOP
2960
誠(chéng)信交易大量庫(kù)存現(xiàn)貨
詢價(jià)
MIT
2402+
TSOP
8324
原裝正品!實(shí)單價(jià)優(yōu)!
詢價(jià)
MIT
24+
TSOP
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
詢價(jià)
MITSUBISHI
22+
TSOP
5000
全新原裝現(xiàn)貨!價(jià)格優(yōu)惠!可長(zhǎng)期
詢價(jià)
MITSUBIS
22+
TSOP40
3000
原裝正品,支持實(shí)單
詢價(jià)
MITSUBISHI
25+
TSOP
10093
只做原裝進(jìn)口!正品支持實(shí)單!
詢價(jià)
MIT
98+
TSSOP
223
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
詢價(jià)