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LMTM6N10

Marking：NCE0106R；Package：SOT-223-3L；N-Channel Enhancement Mode Power MOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

MTD6N10

POWERFIELDEFFECTTRANSISTOR,N-CHANNELENHANCEMENT-MODESILICONGATE,DPAKFORSURFACEMOUNTORINSERTIONMOUNT

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate DPAKforSurfaceMountorInsertionMount ThisTMOSPowerFETisdesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrealydrivers.

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD6N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTD6N10E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTD6N10E

TMOSPOWERFET6.0AMPERES100VOLTSRDS(on)=0.400OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP6N10

POWERFIELDEFFECTTRANSISTOR

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP6N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PHD6N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.54Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PHD6N10E

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforusei

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHP6N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.3A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.54Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

供應商型號品牌批號封裝庫存備注價格
24+
N/A
46000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
23+
18+
12000
原裝正品--可開增值稅發(fā)票量大可訂貨
 詢價
原裝
20+
原裝
56200
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
MURATA/村田
23+
SMD
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
MURATA
23+
SMD
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
MURATA
13+
SMD
50000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
MURATA/村田
2023+
SMD
50000
專注全新正品,優(yōu)勢現(xiàn)貨供應
 詢價
MURATA
23+
SMD
12800
公司只有原裝 歡迎來電咨詢。
 詢價
MURATA/村田
23+
SOP-8
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
MURATA
23+
SMD
8560
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
更多LMTM6N10供應商 更新時間2025-7-23 11:06:00

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