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首頁 >LMSB1218A-RT1G>規(guī)格書列表

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MSB1218A-RT1

PNPGENERALPURPOSEAMPLIFIERTRANSISTORSSURFACEMOUNT

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MSB1218A-RT1

PNPGENERALPURPOSEAMPLIFIERTRANSISTORSSURFACEMOUNT

ThisPNPSiliconEpitaxialPlanarTransistorisdesignedforgeneralpurposeamplifierapplications.ThisdeviceishousedintheSC–70/SOT–323packagewhichisdesignedforlowpowersurfacemountapplications. ?HighhFE,210–460 ?LowVCE(sat),

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MSB1218A-RT1G

PNPSiliconGeneralPurposeAmplifierTransistor

ThisPNPSiliconEpitaxialPlanarTransistorisdesignedforgeneralpurposeamplifierapplications.ThisdeviceishousedintheSC--70/SOT--323packagewhichisdesignedforlowpowersurfacemountapplications. Features ?HighhFE,210--460 ?LowVCE(sat),

ONSEMION Semiconductor

安森美半導體安森美半導體公司

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