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IRG4BC20KD-S

600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package; ? 對(duì)電機(jī)控制的高短路額定值進(jìn)行了優(yōu)化，tsc =10μs, @360V VCE（啟動(dòng)），TJ=125°C, VGE=15V\n? 相較于前代，參數(shù)分布更緊湊，效率更高\(yùn)n? 與 HEXFREDTM 超快、超軟恢復(fù)反并聯(lián)二極管聯(lián)合封裝的 IGBT\n? 無鉛\n\n優(yōu)勢:\n? 4 IGBT 提供可行的高功率密度電機(jī)控制\n? HEXFREDTM 二極管經(jīng)過與 IGBT 并用優(yōu)化，將噪聲、EMI 和開關(guān)損耗降至最低\n;

600V IGBT 與 8-25 kHz 超快、超軟恢復(fù)反并聯(lián)二極管聯(lián)合封裝到 D2-Pak 封裝中\(zhòng)n

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4BC20KD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)

ShortCircuitRatedUltraFastIGBT Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgene

IRF

International Rectifier

IRG4BC20KD-S

IGBT

DESCRIPTION ·Verytightparameterdistribution ·LowVCEsat ·LowEMI APPLICATIONS ·IndustrialPowerSupplies ·Inductivecooking ·Softswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRG4BC20KD-SPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULRTAFAST SOFR RECOVERY DIODE

Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration ?IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC20KD-STRLP

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)

ShortCircuitRatedUltraFastIGBT Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgene

IRF

International Rectifier

IRG4BC20KS

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio

IRF

International Rectifier

IRG4BC20K-S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio

IRF

International Rectifier

IRG4BC20K-SPBF

ShortCircuitRatedUltraFastIGBT

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgenerations ?

IRF

International Rectifier

IRG4BC20MD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardTO-220ABpackage Benefits ?Offershighestefficiencyandshortcircuitcapabilityforinterme

IRF

International Rectifier

IRG4BC20MDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardTO-220ABpackage ?Lead-Free Benefits ?Offershighestefficiencyandshortcircuitcapabilityforintermed

IRF

International Rectifier

技術(shù)參數(shù)

  • Technology?：

    IGBT Gen 4

  • Switching Frequency?min?max：

    8.0kHz?30.0kHz

  • Package?：

    D2PAK (TO-263)

  • Voltage Class?max：

    600.0V

  • IC(@100°)?max：

    9.0A

  • IC(@25°)?max：

    16.0A

  • ICpuls?max：

    32.0A

  • Ptot?max：

    60.0W

  • VCE(sat)?：

    2.27V?

  • Eon?：

    0.34mJ?

  • Eoff(Hard Switching)?：

    0.3mJ?

  • td(on)?：

    54.0ns?

  • tr?：

    34.0ns?

  • td(off)?：

    180.0ns?

  • tf?：

    72.0ns?

  • QGate?：

    34.0nC?

  • IF?max：

    32.0A

  • VF?：

    1.4V?

  • Qrr?：

    65.0nC?

  • Irrm?：

    3.5A?

  • Ets??(max)：

    0.64mJ?(0.96mJ)

  • Moisture Sensitivity Level?：

    1

  • VCE?max：

    600.0V

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
2025+
TO-263-3
32560
原裝優(yōu)勢絕對(duì)有貨
 詢價(jià)
INTERNATIONA
05+
原廠原裝
7111
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IR
1415+
TO-263
28500
全新原裝正品,優(yōu)勢熱賣
 詢價(jià)
IR
23+
TO-263
35890
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
24+
TO263
65200
一級(jí)代理/放心采購
 詢價(jià)
IR
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
INFINEON
1503+
TO-263
3000
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
原裝
1923+
TO263
8900
公司原裝現(xiàn)貨特價(jià)長期供貨歡迎來電咨詢
 詢價(jià)
Infineon
22+
NA
2118
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 詢價(jià)
更多IRG4BC20KD-S供應(yīng)商 更新時(shí)間2025-7-28 16:06:00

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