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IRG4BC10K

Short Circuit Rated UltraFast IGBT

ShortCircuitRatedUltraFastIGBT Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovideshigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Bene

IRG4BC10K

Short Circuit Rated UltraFast IGBT;

IRG4BC10K

Package：TO-220-3；包裝：管件 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 9A 38W TO220AB

IRG4BC10KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)

ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRG4BC10KD

600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package; ? 對(duì)電機(jī)控制的高短路額定值優(yōu)化，tsc =10μs, @360V VCE（啟動(dòng)），TJ=125°C, VGE=15V\n? 低通態(tài)損耗與高開(kāi)關(guān)速度相結(jié)合\n? 相較于前代，參數(shù)分布更緊湊，效率更高\(yùn)n? 與 HEXFREDTM 超快、超軟恢復(fù)反并聯(lián)二極管聯(lián)合封裝的 IGBT\n? 無(wú)鉛\n\n優(yōu)勢(shì):\n? 4 IGBT 提供可行的高功率密度電機(jī)控制\n? HEXFREDTM 二極管經(jīng)過(guò)與 IGBT 并用優(yōu)化，將噪聲、EMI 和開(kāi)關(guān)損耗降至最低\n;

600V IGBT 與超快 8-25 kHz 軟恢復(fù)二極管聯(lián)合封裝到 TO-220AB 封裝中\(zhòng)n

IRG4BC10KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRG4BC10KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packagedw

IRG4BC10KPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packagedw

IRG4BC10KDPBF

High short circuit rating optimized for motor control

IRG4BC10KDPBF_15

High short circuit rating optimized for motor control