IRFD112中文資料GESS數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
IRFD112 |
| 功能描述 | POWER-MOSFET FIELD EFFECT POWER TRANSISTOR |
| 文件大小 |
112.88 Kbytes |
| 頁面數(shù)量 |
2 頁 |
| 生產(chǎn)廠商 | GE Solid State |
| 企業(yè)簡稱 |
GESS |
| 中文名稱 | GE Solid State |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-7-15 22:50:00 |
| 人工找貨 | IRFD112價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
IRFD112規(guī)格書詳情
POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
產(chǎn)品屬性
- 型號(hào)：
IRFD112
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
NA |
6500 |
全新原裝假一賠十 |
詢價(jià) | ||
VIS |
24+ |
DIP |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
IR |
01+ |
DIP-4 |
12999 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
HARRIS |
24+/25+ |
70 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | |||
GESS |
23+ |
NA |
39960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
MOT |
9207 |
382 |
公司優(yōu)勢(shì)庫存 熱賣中! |
詢價(jià) | |||
IR-VISHAY |
23+ |
DIP4 |
19286 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
IR |
23+ |
DIP-4 |
8238 |
詢價(jià) | |||
IR |
22+ |
DIP-4 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
MOT |
23+ |
65480 |
詢價(jià) |
