IRFD112中文資料GESS數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
IRFD112 |
| 功能描述 | POWER-MOSFET FIELD EFFECT POWER TRANSISTOR |
| 文件大小 |
112.88 Kbytes |
| 頁(yè)面數(shù)量 |
2 頁(yè) |
| 生產(chǎn)廠商 | GESS GE Solid State |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-9-5 15:01:00 |
| 人工找貨 | IRFD112價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
IRFD112規(guī)格書詳情
POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
產(chǎn)品屬性
- 型號(hào)：
IRFD112
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
16+ |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
16+ |
7000 |
詢價(jià) | |||
HARRIS |
2447 |
DIP4 |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
Vishay Siliconix |
2022+ |
4-DIP(0.300 |
38550 |
詢價(jià) | |||
IR |
25+ |
PLCC44 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
IR |
DIP-4 |
68500 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
IR |
24+ |
DIP-4 |
90000 |
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理 |
詢價(jià) | ||
IR |
06+ |
原廠原裝 |
4483 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
IOR |
24+ |
DIP-4 |
100 |
詢價(jià) | |||
HARRIS |
24+/25+ |
70 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢價(jià) |
