IRFD110中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
IRFD110規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? For Automatic Insertion
? End Stackable
? 175 °C Operating Temperature
? Fast Switching and Ease of Paralleling
? Lead (Pb)-free Available
產(chǎn)品屬性
- 型號：
IRFD110
- 功能描述：
MOSFET 100V Single N-Channel HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
DIP-4 |
6500 |
全新原裝假一賠十 |
詢價 | ||
IR |
24+ |
DIP-4 |
80000 |
只做自己庫存 全新原裝進口正品假一賠百 可開13%增 |
詢價 | ||
VISHAY/威世 |
20+ |
HVMDIP-4 |
69052 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IR |
24+/25+ |
27 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
IOR |
24+ |
CDIP4 |
20000 |
全新原廠原裝，進口正品現(xiàn)貨，正規(guī)渠道可含稅??！ |
詢價 | ||
IR |
23+ |
HD-1 |
9888 |
專做原裝正品,假一罰百! |
詢價 | ||
IR |
NA |
8560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
SILICONIX |
2023+ |
SMD |
13630 |
安羅世紀(jì)電子只做原裝正品貨 |
詢價 | ||
22+ |
5000 |
詢價 | |||||
IR |
22+ |
PDIP4 |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 |
