IRFD110中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
IRFD110規(guī)格書詳情
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
特性 Features
? 1A, 100V
? rDS(ON) = 0.600?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號：
IRFD110
- 功能描述：
MOSFET 100V Single N-Channel HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
PLCC44 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
IR |
24+ |
DIP |
3680 |
鄭重承諾只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
24+ |
DIP |
35200 |
一級代理分銷/放心采購 |
詢價 | ||
IR |
06+ |
DIP-4 |
10000 |
自己公司全新庫存絕對有貨 |
詢價 | ||
IR |
23+ |
DIP4 |
9800 |
全新原裝現(xiàn)貨,假一賠十 |
詢價 | ||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
VISH |
專業(yè)軍工 |
NA |
1000 |
只做原裝正品軍工級部分訂貨 |
詢價 | ||
IR |
1923+ |
DIP-4 |
6896 |
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨 |
詢價 | ||
24+ |
DIP-4 |
1000 |
詢價 | ||||
IR |
24+/25+ |
27 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 |
