IRFBE30S中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
IRFBE30S規(guī)格書詳情
FEATURES
? Dynamic dV/dt rating
? Repetitive avalanche rated
? Fast switching
? Ease of paralleling
? Simple drive requirements
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note?
* This datasheet provides information about parts that are?
RoHS-compliant and / or parts that are non RoHS-compliant. For?
example, parts with lead (Pb) terminations are not RoHS-compliant.?
Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
產(chǎn)品屬性
- 型號：
IRFBE30S
- 功能描述：
MOSFET N-Chan 800V 4.1 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VISHAY |
1552+ |
TO263 |
1000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
VISHAY |
24+/25+ |
D2-PAK(TO-263) |
4000 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||
Vishay(威世) |
23+ |
N/A |
11800 |
詢價 | |||
VISHAY |
2020+ |
TO-263 |
9500 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
IR |
2023+ |
D2-PAK |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-263 |
35890 |
詢價 | |||
IRFBE30STRLPBF |
575 |
575 |
詢價 | ||||
VISHAY/威世 |
2022+ |
D2-PAK(TO-263) |
8000 |
只做原裝支持實單,有單必成。 |
詢價 | ||
IR |
22+ |
D2-PAK |
8000 |
原裝正品支持實單 |
詢價 | ||
VISHAY/威世 |
21+ |
NA |
12820 |
只做原裝,質(zhì)量保證 |
詢價 |
