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首頁(yè) >IRF640NSPBF>規(guī)格書(shū)列表

零件型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

IRF640STRLPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640STRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640STRR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640STRRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640STRRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640T

N-channel200V-0.15廓-15A-TO-220MESHOVERLAY??PowerMOSFET

Description ThisPowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources Generalfeatures ■Extremelyhighdv/dtcapability ■Gatechargeminimize

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRFF640

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

IRFI640

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI640G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF640NSPBF

  • 功能描述：

    MOSFET 30V 1 N-CH 150mOhm HEXFET 200V VDSS

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
21+
TO-263
20000
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
IR
24+
TO-220
15000
全新原裝的現(xiàn)貨
 詢(xún)價(jià)
IR
23+
TO-263
65400
詢(xún)價(jià)
IR
24+
TO-263
500
只做原廠(chǎng)渠道 可追溯貨源
 詢(xún)價(jià)
Infineon(英飛凌)
24+
D2PAK
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢(xún)價(jià)
IR
2405+
TO-263
4475
只做原裝正品渠道訂貨
 詢(xún)價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢(xún)價(jià)
IR
23+
TO-263
20000
原裝正品,假一罰十
 詢(xún)價(jià)
Infineon
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢(xún)價(jià)
IR
17+
NA
9998
全新原裝現(xiàn)貨
 詢(xún)價(jià)
更多IRF640NSPBF供應(yīng)商 更新時(shí)間2025-7-30 8:41:00

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