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IRFI640G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI640G

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A)

DESCRIPTION ThirdgenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-in

IRF

International Rectifier

IRFI640G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

KERSEMI

Kersemi Electronic Co., Ltd.

IRFI640G

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=9.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconvert

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFI640G

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A);

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFI640G

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI640G

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI640GPBF

power mosfet

DESCRIPTION ThirdgenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-in

IRF

International Rectifier

IRFI640GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI640GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號:

    IRFI640G

  • 功能描述:

    MOSFET N-Chan 200V 9.8 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
N/A
8000
全新原裝正品,現(xiàn)貨銷售
詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
IR
06+
TO-220
5000
全新原裝 絕對有貨
詢價
IR
23+
TO-220F
35890
詢價
IR
2020+
TO-220
400
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
IR
23+
TO-220F
5000
原裝正品,假一罰十
詢價
IR
24+
TO-220FullPak(Iso)
8866
詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
Vishay
23+
TO-220F
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
IR
1948+
TO-220
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
更多IRFI640G供應(yīng)商 更新時間2025-7-30 17:08:00