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IRF640NSPBF

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640NSPBF

HEXFET? Power MOSFET

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF640NSPBF

Advanced Process Technology

IRF

International Rectifier

IRF640NSPBF

Advanced Process Technology

IRF

International Rectifier

IRF640NSRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF640NSTRLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF640PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640PBF

18A,200VHeatsinkN-ChannelTypePowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IRF640PBF

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedFastSwitching

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640PBF

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

詳細(xì)參數(shù)

  • 型號：

    IRF640NSPBF

  • 功能描述：

    MOSFET 30V 1 N-CH 150mOhm HEXFET 200V VDSS

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
21+
TO-263
20000
原裝現(xiàn)貨假一罰十
 詢價
IR
24+
TO-220
15000
全新原裝的現(xiàn)貨
 詢價
IR
23+
TO-263
65400
詢價
IR
24+
TO-263
500
只做原廠渠道 可追溯貨源
 詢價
Infineon(英飛凌)
24+
D2PAK
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IR
2405+
TO-263
4475
只做原裝正品渠道訂貨
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
23+
TO-263
20000
原裝正品,假一罰十
 詢價
Infineon
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價
IR
17+
NA
9998
全新原裝現(xiàn)貨
 詢價
更多IRF640NSPBF供應(yīng)商 更新時間2025-7-26 10:11:00

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