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IRF640N

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640NL

PowerMOSFET(Vdss=200V,Rds(on)=0.15ohm,Id=18A)

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF640NL

HEXFETPowerMOSFET

IRF

International Rectifier

IRF640NL

N-ChannelPowerMOSFETs200V,18A,0.15ohm

Features ?UltraLowOn-Resistance -rDS(ON)=0.102?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRateingCurve

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640NL

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640NL

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-262packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchingapplic

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF640NL

AdvancedProcessTechnology

IRF

International Rectifier

IRF640NLPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF640NLPBF

AdvancedProcessTechnologyDynamicdv/dtRating175OperatingTemperature

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRC640

  • 功能描述：

    MOSFET N-Chan 200V 18 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
INTERNATIONA
05+
原廠原裝
13448
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IR
24+
原廠封裝
2000
原裝現(xiàn)貨假一罰十
 詢價(jià)
ir
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
IR
1726+
TO-220-5
6528
只做進(jìn)口原裝正品現(xiàn)貨,假一賠十!
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
23+
TO-220-5
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
IR
23+
原廠封裝
9888
專做原裝正品,假一罰百!
 詢價(jià)
IR
25+23+
TO220
14066
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
IR
22+
TO220
23443
原裝正品現(xiàn)貨
 詢價(jià)
IR
23+
TO-220-5L
65480
詢價(jià)
更多IRC640供應(yīng)商 更新時(shí)間2025-7-29 17:59:00

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