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IRF640

N-ChannelEnhancementModePOWERMOSFET

Features: *SuperHighDenseCellDesignForLowRDS(ON) RDS(ON)

WEITRON

Weitron Technology

IRF640

POWERTRMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆SiliconGateforFastSwitchingSpeeds ◆LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevated Temp

SUNTAC

Suntac Electronic Corp.

IRF640

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. Features *RepetitiveAvalancheRated *FastSwitching *EaseofParalleling *SimpleDriveRequirements

DCCOM

Dc Components

IRF640

NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinhighspeedpowerswitching,low voltage,relaydriversandgeneralpurposeswitching applications. DC-DC&DC-ACconvertersfortelecom,industrialandlighting equipment. CompliancetoRoHS.

COMSET

Comset Semiconductor

IRF640

18A200VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆SiliconGateforFastSwitchingSpeeds ◆LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevated Temp

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF640

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=200V,ID=18A,RDS(ON)

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

IRF640

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedFastSwitching

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF640areN-channelenhancementmodesilicongatepowerfieldeffecttransistors. Theyaredesigned,testedandguaranteedtowithstandlevelofenergyinbreakdownavalanchemadeofoperation. FEATURES ●RDS(ON)=0.180?@VGS=10V ●Ultralowgatecharge(63nCmax.) ●

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF640

N-ChannelPowerMosfets

18A,200V,0.180Ohm,N-ChannelPowerMosfets TheseareN-Channelenhansementmodesilicongatepowerfieldeffecttransistors.TheyareadvancepowerMOSFETsdesigned,tested,andguaranteedtowithstancdaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF640

SEMICONDUCTORS

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詳細參數(shù)

  • 型號：

    IRC640

  • 功能描述：

    MOSFET N-Chan 200V 18 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INTERNATIONA
05+
原廠原裝
13448
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
IR
24+
原廠封裝
2000
原裝現(xiàn)貨假一罰十
 詢價
IR
23+
TO-2205-Pin(
8600
全新原裝現(xiàn)貨
 詢價
ir
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
IR
1726+
TO-220-5
6528
只做進口原裝正品現(xiàn)貨,假一賠十!
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-220-5
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IR
23+
原廠封裝
9888
專做原裝正品,假一罰百!
 詢價
IR
25+23+
TO220
14066
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
IR
22+
TO220
23443
原裝正品現(xiàn)貨
 詢價
更多IRC640供應(yīng)商 更新時間2025-7-23 15:44:00

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