描述 Description

Responding to the market requirement of high power density and highest performance discrete products Infineon introduces the new Kelvin Emitter TO-247PLUS 4pin package for 1200V IGBT.?Higher current capability, improved thermal behaviour, extended C-E creepage are the key features of the TO-247PLUS package. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop with the 4pin package directly to the gate driver and allows for reduction the both of E on and E off losses amounting up to 20% lower total switching losses E ts.

特性 Features

? Extremely low control inductance loop with extra emitter pin for driver feedback
? 20% reduction in total switching losses compared to 3pin package using same technology
? Up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint

優(yōu)勢(shì):
? Highest efficiency with lowest switching losses 1200 V IGBT
? High power density 1200V discrete IGBT
? Lower thermal resistance?R th(jh)?and?improved by ~15% heat dissipation?capability of TO-247PLUS vs TO-247

應(yīng)用 Application

? Uninterruptable power suppliers (UPS)
? Battery Charger
? Energy storage
? Portable welding converter

簡(jiǎn)介

IKY40N120CH3屬于分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單。由制造生產(chǎn)的IKY40N120CH3晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個(gè)端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開(kāi)關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開(kāi)關(guān)能量和柵極電荷。