描述 Description

High speed 600 V, 75 A hard-switching?TRENCHSTOP??IGBT3?co-packed with free-wheeling diode in a TO-247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

特性 Features

? Low switching losses for high efficiency
? Excellent Vce(sat)behavior thanks to the famous Infineon TRENCHSTOP? technology
? Fast switching behavior with low EMI emissions
? Optimized diode for target applications, meaning further improvement in switching losses
? Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
? Short circuit capability 5μs
? Offering Tj(max)of 175°C
? Packaged with and without freewheeling diode for increased design freedom

優(yōu)勢:
? Low switching and conduction losses
? Very good EMI behavior
? Can be used with a?small gate resistor for reduced delay time and voltage overshoot
? High current density
? Best-in-class 600 V IGBT efficiency and EMI behavior

簡介

IKW75N60H3屬于分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單。由制造生產(chǎn)的IKW75N60H3晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開關(guān)能量和柵極電荷。