描述 Description

Infineon's TRENCHSTOP? IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

特性 Features

·Lowest V ce(sat) drop for lower conduction losses
·Low switching losses
·Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
·Very soft, fast recovery anti-parallel Emitter Controlled Diode
·High ruggedness, temperature stable behavior
·Low EMI emissions
·Low gate charge
·Very tight parameter distribution

應(yīng)用 Application

? · UPS
· Solar Inverters
· Major Home Appliances
· Welding
· Air conditioning
· Industrial Drives
·Other hard switching applications

簡介

IHW40T60屬于分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單。由制造生產(chǎn)的IHW40T60晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開關(guān)能量和柵極電荷。