描述 Description

The?3rd?generation of reverse conducting?1100 V, 30 A TRENCHSTOP? RC-IGBT3 with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs.

特性 Features

? Best-in-class conduction properties in VCEsatand Vf
? Lowest switching losses, highest efficiency
? Excellent thermal behavior
? Tj(max)= 175°C
? Soft current turn-off waveforms for low EMI

優(yōu)勢(shì):
? Lowest power dissipation
? Better thermal management
? Surge current capability for lower EMI filtering requirements
? Reduced system costs
? Highest reliability against peak currents

簡(jiǎn)介

IHW30N110R3屬于分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單。由制造生產(chǎn)的IHW30N110R3晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個(gè)端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開(kāi)關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開(kāi)關(guān)能量和柵極電荷。