描述 Description

The 5th?generation of reverse conducting 1200 V, 40 A TRENCHSTOP? 5 IGBTs with monolithically integrated reverse conducting diode in a TO247 package has been optimized for the demanding requirements of Induction Cooking applications. The 40 A RC-H5 devices complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability.

特性 Features

? Switching losses reduced by 20%
? Very low conduction losses
? Reduced turn-on current spike up to 10%
? Tj(max)= 175°C
? Soft current turn-off waveforms for low EMI

優(yōu)勢:
? Increased switching frequency
? Lowest power dissipation
? Better thermal management for higher reliability
? Lower EMI filtering requirements
? Reduced system costs
? Highest reliability against peak current

簡介

IHW40N120R5屬于分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單。由制造生產(chǎn)的IHW40N120R5晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開關(guān)能量和柵極電荷。