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首頁(yè)>HUF75309T3ST>規(guī)格書(shū)詳情

HUF75309T3ST中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

HUF75309T3ST
廠商型號(hào)

HUF75309T3ST

功能描述

3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET

文件大小

186.17 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠商

FAIRCHILD Fairchild Semiconductor

中文名稱(chēng)

仙童半導(dǎo)體 飛兆/仙童半導(dǎo)體公司

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-8-11 18:22:00

人工找貨

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HUF75309T3ST規(guī)格書(shū)詳情

This N-Channel power MOSFET is manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery operated products.

特性 Features

? 3A, 55V

? Ultra Low On-Resistance, rDS(ON) = 0.070?

? Diode Exhibits Both High Speed and Soft Recovery

? Temperature Compensating PSPICE? Model

? Thermal Impedance SPICE Model

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

產(chǎn)品屬性

  • 型號(hào):

    HUF75309T3ST

  • 功能描述:

    MOSFET 19a 55V N-Channel UltraFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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