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HUF75309D3S中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

HUF75309D3S
廠商型號

HUF75309D3S

功能描述

19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs

文件大小

218.88 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商

FAIRCHILD Fairchild Semiconductor

中文名稱

仙童半導(dǎo)體 飛兆/仙童半導(dǎo)體公司

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-12 14:50:00

人工找貨

HUF75309D3S價格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨

HUF75309D3S規(guī)格書詳情

These N-Channel power MOSFETs are manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

特性 Features

? 19A, 55V

? Simulation Models

- Temperature Compensated PSPICE? and SABER? Models

- SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? Related Literature

- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號:

    HUF75309D3S

  • 功能描述:

    MOSFET 19a 55V N-Channel UltraFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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