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HGT1S12N60C3DS規(guī)格書詳情
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188.
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特性 Features
? 24A, 600V at TC = 25°C
? Typical Fall Time at TJ = 150°C . . . . . . . . . . . . . . . . 210ns
? Short Circuit Rating
? Low Conduction Loss
? Hyperfast Anti-Parallel Diode
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產(chǎn)品屬性
- 型號:
HGT1S12N60C3DS
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
25+ |
TO-220 |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
FAIRCHILD |
05+ |
原廠原裝 |
4760 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
FAIRCHILD/仙童 |
25+ |
DIP |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
Fairchild/ON |
22+ |
TO263AB |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
FAIRCHILD |
19+ |
DIP |
20000 |
1000 |
詢價 | ||
24+ |
N/A |
52000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
FAIRCHILD |
25+23+ |
DIP |
30011 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨 |
詢價 | ||
FAIRCHILD/仙童 |
2022+ |
630 |
全新原裝 貨期兩周 |
詢價 | |||
FAIRCHILD/仙童 |
23+ |
DIP |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
FAIRCHILD |
24+ |
DIP |
20000 |
全新原廠原裝,進口正品現(xiàn)貨,正規(guī)渠道可含稅!! |
詢價 |