The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly developmental type TA49171.

特性 Features

? 27A, 600V, TC = 25oC

? 600V Switching SOA Capability

? Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC

? Short Circuit Rating

? Low Conduction Loss

? Related Literature

?? - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”