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G7N60C3D

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G7N60C3D

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G7N60C3D

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

TheHGTP7N60C3DandHGT1S7N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

G7N60C3D

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTD7N60C3

14A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTD7N60C3,HGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlowe

HARRIS

Harris Corporation

HGTD7N60C3S

14A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTD7N60C3S

14A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTD7N60C3,HGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlowe

HARRIS

Harris Corporation

HGTD7N60C3S

14A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar

Intersil

Intersil Corporation

HGTP7N60C3

14A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar

Intersil

Intersil Corporation

HGTP7N60C3

14A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTD7N60C3,HGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlowe

HARRIS

Harris Corporation

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進(jìn)口原裝
23+
3167
1015
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25+
TO-263
450
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23+
NA
19960
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BEI
23+
SMD
50000
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50
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BEL
23+
NA
10000
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NK/南科功率
2025+
DFN2*2-6L
986966
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2447
SOT-23-3L
105000
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GOFORD
21+
SOT-23-3L
2500
進(jìn)口原裝,優(yōu)勢現(xiàn)貨
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GOFORD
50
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更多G7N60C3D供應(yīng)商 更新時(shí)間2025-7-24 14:03:00