G7N60C3D中文資料INTERSIL數(shù)據(jù)手冊PDF規(guī)格書
G7N60C3D規(guī)格書詳情
The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
特性 Features
? 14A, 600V at TC = 25°C
? 600V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150°C
? Short Circuit Rating
? Low Conduction Loss
? Hyperfast Anti-Parallel Diode
?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025+ |
DFN2*2-6L |
986966 |
國產(chǎn) |
詢價 | ||
FAIRCHILD/仙童 |
25+ |
TO-263 |
450 |
原裝正品,假一罰十! |
詢價 | ||
IR |
2025+ |
TO-3P |
3685 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 | ||
BEL |
23+ |
NA |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
BEI |
24+ |
NA/ |
50 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
09+ |
TO-247 |
62 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
谷峰 |
兩年內(nèi) |
NA |
1866 |
實單價格可談 |
詢價 | ||
IR |
23+ |
TO-247 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
22+ |
TO-247 |
18000 |
只做全新原裝,支持BOM配單,假一罰十 |
詢價 | ||
GOFORD(谷峰) |
2447 |
SOT-23-3L |
105000 |
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 |
