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G30N60B3

60A, 600V, UFS Series N-Channel IGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60B3D

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode; ? 60A, 600V, TC= 25oC\n? 600V Switching SOA Capability\n? Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ= 150oC\n? Short Circuit Rating\n? Low Conduction Loss\n? Hyperfast Anti-Parallel Diode;

60A, 600V, UFS Series N-Channel IGBT\nwith Anti-Parallel Hyperfast DiodeThe HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

G30N60B3D

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG30N60B3

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

HGTG30N60B3

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG30N60B3D

60A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG30N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

Intersil

Intersil Corporation

詳細(xì)參數(shù)

  • 型號：

    G30N60B3

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

供應(yīng)商型號品牌批號封裝庫存備注價格
H
24+
TO247
3000
詢價
FAIRCHILD/仙童
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FAIRCHILD/仙童
22+
TO-247
6000
十年配單,只做原裝
 詢價
哈理斯
TO-247
68500
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
FAIRCHILD
23+
2800
正品原裝貨價格低
 詢價
FAIRCHI
23+
TO247
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
FAIRCHILD/仙童
24+
NA/
403
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
FAIRCHILD/仙童
22+
TO-247
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價
FAIRCHILD/仙童
25+
TO-247
453
原裝正品,假一罰十!
 詢價
FAIRCHILD/仙童
24+
TO3P
27950
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
 詢價
更多G30N60B3供應(yīng)商 更新時間2025-7-30 16:30:00

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