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G30N60B3D

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode; ? 60A, 600V, TC= 25oC\n? 600V Switching SOA Capability\n? Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ= 150oC\n? Short Circuit Rating\n? Low Conduction Loss\n? Hyperfast Anti-Parallel Diode;

60A, 600V, UFS Series N-Channel IGBT\nwith Anti-Parallel Hyperfast DiodeThe HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

G30N60B3D

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG30N60B3

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

HGTG30N60B3

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG30N60B3D

60A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG30N60B3D

60A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG30N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

Intersil

Intersil Corporation

HGTG30N60B3D

60A,600V,UFSSeriesN-ChannelIGBT

60A,600V,UFSSeriesN-ChannelIGBT withAnti-ParallelHyperfastDiode TheHGTG30N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabip

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXXH30N60B3

XPTTM600VIGBT

IXYS

IXYS Corporation

IXXQ30N60B3M

AdvanceTechnicalInformation

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    G30N60B3D

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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FSC/仙童
24+
TO-247
7530
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購(gòu)!
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哈里斯
05+
TO-247
3000
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HARRIS
23+
TO-3P
5000
原裝正品,假一罰十
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FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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FAIRCHILD/仙童
2447
TO-3P
100500
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哈里斯HARRIS
22+
TO-247
6000
十年配單,只做原裝
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FSC
12+
TO-247
100
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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哈理斯
TO-247
68500
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HARRIS
2023+
TO3PO24
5800
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FSC
23+
TO247
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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更多G30N60B3D供應(yīng)商 更新時(shí)間2025-7-29 16:19:00

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