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G30N03
G30N03D3

Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description TheG30N03D3usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G30N03A
G30N03D3A

Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description TheG30N03D3Ausesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

G30N03L
G30N03D3-L

Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description TheG30N03D3-Lusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G30N04
G30N04D3

Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description TheG30N04D3usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G30H603
IGP30N60H3

Package：PG-TO220-3；High speed switching series third generation

TRENCHSTOPtechnologyoffering ?verylowturn-offenergy ?lowVCEsat ?lowEMI ?maximumjunctiontemperature175°C ?qualifiedaccordingtoJEDECfortargetapplications ?Pb-freeleadplating,halogen-freemouldcompound,RoHScompliant

G30T100
IGW30N100T

Package：PG-TO247-3；Low Loss IGBT: IGBT in TrenchStop and Fieldstop technology

LowLossIGBT:IGBTinTrenchStop?andFieldstoptechnology ?TrenchStop?andFieldstoptechnologyfor1000Vapplications offers: -lowVCEsat -verytightparameterdistribution -highruggedness,temperaturestablebehavior -positivetemperaturecoefficientinVCEsat ?Designedf

G30T60
IGW30N60T

Package：PG-TO247-3；Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

Features: ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C ?Shortcircuitwithstandtime5?s ?Designedfor: -FrequencyConverters -UninterruptiblePowerSupply ?TRENCHSTOP?andFieldstoptechnologyfor600Vapplications offers: -verytightparameterdistributio

G30N60HS
SGP30N60HS

Package：PG-TO-220-3-1；High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh

G30N60HS
SGW30N60HS

Package：PG-TO-247-3；High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh

G30H65DFB2
STGB30H65DFB2

Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a D2PAK package

Features ?Maximumjunctiontemperature:TJ=175°C ?LowVCE(sat)=1.65V(typ.)@IC=30A ?Veryfastandsoftrecoveryco-packageddiode ?Minimizedtailcurrent ?Tightparameterdistribution ?Lowthermalresistance ?PositiveVCE(sat)temperaturecoefficient Applications ?We